Electron Beam Litography


Brand / Model

Raith Pioneer

 

Features

Filament type: Tungsten, LaB6
Sample travel range: 50x50x25 mm
Beam size (resolution): ≤ 2.5 nm (≤ 1.6 nm)
Minimum feature size: ≤ 20 nm
Field stitching: ≤ 50 (60)nm (m+2σ)
Overlay accuracy (alignment): ≤ 50 (60)nm (m+2σ)
Beam current drift: ≤ 0.5% / 1 hour
Writing speed: 2.5 MHz

 

Aim

Electron Beam Lithography (EBL) allows users to write patterns with high resolution, <10 nm in size. Focused electron beams scan according to a pattern defined on a CAD file over a sample coated with an electron-sensitive resist. The sample is then developed in an appropriate solvent which reveals the structures defined into the resist. In this way, nano-sized architectures are developed.

 

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